| PART |
Description |
Maker |
| UB6006 |
N-Ch 60V Fast Switching MOSFETs
N-Ch 60V Fast Switching MOSFETs Advanced high cell density Trench technology
|
Unitpower Technology Limited
Unitpower Technology Li...
|
| TSM2307CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., L...
|
| AMS3407S23RG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2301 |
Super high density cell design for
|
Advanced Monolithic Systems Ltd
|
| QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL306 |
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC
|
QuickLogic, Corp.
|
| LS14500EX |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| MAX1703ESE |
1-Cell to 3-Cell / High-Power 1.5A / Low-Noise / Step-Up DC-DC Converter
|
Maxim
|
| ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI |
IN-SYSTEM PROGRAMMABLE HIGH DENSITY PLD
IC,COMPLEX-EEPLD,64-CELL,13NS PROP DELAY,LDCC,44PIN,PLASTIC
|
LATTICE[Lattice Semiconductor]
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
